STD1802 Datasheet, PDF (1/2 Pages) STMicroelectronics – LOW VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

isc Silicon NPN Power Transistor
INCHANGE Semiconductor
STD1802
DESCRIPTION
·Low Collector-Emitter Saturation Voltage-
: VCE(sat)= 0.4V(Max)( IC= 3A; IB= 0.15A)
·DC Current Gain -hFE = 100(Min)@ IC= 3A
·Fast -Switching speed
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·CCFL dirvers
·Voltage regulators
·Relay dirvers
·High efficiency low voltage switching applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
80
V
VCEO Collector-Emitter Voltage
60
V
VEBO
Emitter-Base Voltage
6
V
IC
Collector Current-Continuous
3
A
ICM
Collector Current-Peak
IB
Base Current
PC
Total Power Dissipation
@ TC=25℃
TJ
Junction Temperature
6
A
1
A
15
W
150
℃
Tstg
Storage Temperature Range
-65~150 ℃
THERMAL CHARACTERISTICS
SYMBO
L
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance, Junction to Case 8.33
℃/W
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