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| SGSF313 Datasheet, PDF (2/2 Pages) STMicroelectronics – HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORS | |||
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
SGSF313
ELECTRICAL CHARACTERISTICS
Tj=25â unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 0.1A; L= 25mH
VCE(sat)-1
VCE(sat)-2
Collector-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
IC= 1 A ;IB= 0.1A
IC= 1 A ;IB= 0.1A ;TC=125â
IC= 2A ;IB= 0.4 A
IC= 2A ;IB= 0.4 A ;TC=125â
VCE(sat)-3 Collector-Emitter Saturation Voltage IC= 2.5A ;IB=B 0.5 A
VBE(sat)-1 Base-Emitter Saturation Voltage
IC= 1A; IB=B 0.1A
VBE(sat)-2 Base-Emitter Saturation Voltage
IC= 2A; IB=B 0.4A
VBE(sat)-3 Base-Emitter Saturation Voltage
ICES
Collector Cutoff Current
ICEO
Collector Cutoff Current
hFE-1
DC Current Gain
hFE-2
DC Current Gain
hFE-3
DC Current Gain
hFE-4
DC Current Gain
IC= 2.5A; IB= 0.5 A
VCE= 1000V;VBE= 0
VCE= 1000V;VBE= 0;TC=125â
VCE= 450V; IB= 0
IC= 1A ; VCE= 2.5V
IC= 1A ; VCE= 2.5V;TC=125â
IC= 1A ; VCE= 5V
IC= 1A ; VCE= 5V;TC=125â
IC= 2A ; VCE= 1V
IC= 2A ; VCE= 1V;TC=125â
IC= 5mA; VCE= 5V
Switching Times; Resistive Load
ton
Turn-on Time
tS
Storage Time
tf
Turn-off Time
VCC=250V ,IC=2.5A
IB1= 0.5A;IB2= -1A
MIN TYP. MAX UNIT
450
V
0.5
0.6
V
0.45
0.8
V
0.75 V
1.1
V
1.25 V
1.3
V
0.01
0.1
mA
0.1 mA
12
25
15
45
28
6
12
10
0.5
1
μs
1.5 2.5 μs
0.18 0.3 μs
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