SGSF313 Datasheet, PDF (1/2 Pages) STMicroelectronics – HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORS

INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
SGSF313
DESCRIPTION
·Collector-Emitter Sustaining Voltage-
: V_CEO(SUS)= 450V(Min)
·High Switching Speed
·Low Saturation Voltage
APPLICATIONS
·Designed to be used as switch in high efficency off-line
(220V mains) switching power supplies for consumer
applications like sets VCR’s and monitors.
ABSOLUTE MAXIMUM RATINGS(T_a=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
V_CEX Collector-Emitter Voltage(V_BE= -2.5V) 1000
V
V_CES Collector-Emitter Voltage(V_BE=0)
1000
V
V_CEO Collector-Emitter Voltage
450
V
V_EBO Emitter-Base Voltage
10
V
I_C
Collector Current-Continuous
7
A
I_CM
Collector Current-Peak
10
A
I_BB
Base Current
3
A
I_BM
Base Current-Peak
P_D
Total Power Dissipation@T_C=25℃
T_j
Junction Temperature
T_stg
Storage Temperature
6
A
70
W
150
℃
-65~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
R_{th j-c} Thermal Rresistance,Junction to Case
MAX UNIT
1.78 ℃/W
isc Website：www.iscsemi.cn