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| PMD11K60 Datasheet, PDF (2/2 Pages) Inchange Semiconductor Company Limited – isc Silicon PNP Darlingtion Power Transistor | |||
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INCHANGE Semiconductor
isc Silicon PNP Darlingtion Power Transistor
isc Product Specification
PMD11K60
ELECTRICAL CHARACTERISTICS
TC=25â unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -100mA; IB= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= -6A; IB=B -24mA
VBE(sat) Base-Emitter Saturation Voltage
IC= -6A; IB=B -24mA
VBE(on) Base-Emitter On Voltage
ICER
Collector Cutoff current
IEBO
Emitter Cut-off current
IC= -6A; VCE= -3V
VCE= -60V; RBE= 1KΩ
VCE= -60V; RBE= 1KΩ, TC=150â
VEB= -5V; IC= 0
hFE
DC Current Gain
IC= -6A; VCE= -3V
fT
Current-GainâBandwidth Product IC= -5A; VCE= -3V, f= 1kHz
COB
Output Capacitance
IE= 0; VCB= -10V; ftest= 1.0MHz
MIN MAX UNIT
-60
V
-2.0
V
-2.8
V
-2.8
V
-1.0
-5.0
mA
-2.0
mA
800 20000
4
MHz
300
pF
isc Websiteï¼www.iscsemi.cn
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