PMD11K60 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon PNP Darlingtion Power Transistor

INCHANGE Semiconductor
isc Product Specification
isc Silicon PNP Darlingtion Power Transistor
PMD11K60
DESCRIPTION
·High DC current gain
·Collector-Emitter Sustaining Voltage-
V_CEO(SUS)= -60V(Min)
·Complement to type PMD10K60
APPLICATIONS
·Designed for general purpose amplifier and low frequency
switching applications
ABSOLUTE MAXIMUM RATINGS(T_C=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
V_CBO Collector-Base Voltage
-60
V
V_CEO Collector-Emitter Voltage
-60
V
V_EBO Emitter-Base Voltage
-5.0
V
I_C
Collector Current -Continuous
-12
A
I_CP
Collector Current-Peak
-20
A
I_BB
Base Current
-0.2
A
P_C
Collector Power Dissipation@T_C=25℃
150
W
T_j
Junction Temperature
150
℃
T_stg
Storage Temperature
-65~200 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
R_{th j-c} ThermalResistance, Junction to Case
MAX UNIT
1.17 ℃/W
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