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| MMBR941L Datasheet, PDF (2/9 Pages) New Jersey Semi-Conductor Products, Inc. – Silicon NPN RF Transistor | |||
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INCHANGE Semiconductor
isc Silicon NPN RF Transistor
isc RF Product Specification
MMBR941L
ELECTRICAL CHARACTERISTICS
TC=25â unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 0.1mA ; IB= 0
10
V
V(BR)CBO Collector-Base Breakdown Voltage
IC= 0.1mA ; IE= 0
IEBO
Emitter Cutoff Current
VEB= 1V; IC= 0
ICBO
Collector Cutoff Current
VCB= 10V; IE= 0
20
V
0.1 μA
0.1 μA
hFE
DC Current Gain
IC= 5mA ; VCE= 6V
50
200
COB
Output Capacitance
IE= 0 ; VCB= 10V; f= 1MHz
0.35
pF
fT
Current-GainâBandwidth Product
IC= 15mA ; VCE= 6V; f= 1GHz
︱S21e︱2 Insertion Power Gain
︱S21e︱2 Insertion Power Gain
IC= 15mA ; VCE= 6V;f= 1.0GHz
IC= 15mA ; VCE= 6V;f= 2.0GHz
GU max Maximum Unilateral Gain
IC= 15mA ; VCE= 6V;f= 1.0GHz
8
GHz
14
dB
8.0
dB
16
dB
GU max Maximum Unilateral Gain
NF
Noise Figure
IC= 15mA ; VCE= 6V;f= 2.0GHz
IC= 5mA ; VCE= 6V; f= 1GHz;
RG= 50Ω
10
dB
1.9 2.8 dB
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