MMBR941L Datasheet, PDF (1/9 Pages) New Jersey Semi-Conductor Products, Inc. – Silicon NPN RF Transistor

INCHANGE Semiconductor
isc Silicon NPN RF Transistor
isc RF Product Specification
MMBR941L
DESCRIPTION
·Low Noise
·High Current-Gain Bandwidth Product
APPLICATIONS
·Designed for use in high gain , low noise small-signal
amplifiers.
ABSOLUTE MAXIMUM RATINGS(T_a=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
V_CBO Collector-Base Voltage
20
V
V_CEO Collector-Emitter Voltage
10
V
V_EBO Emitter-Base Voltage
1.5
V
I_C
Collector Current-Continuous
Collector Power Dissipation
P_C
@T_C= 75℃
T_J
Junction Temperature
T_stg
Storage Temperature Range
50
mA
0.25
W
150
℃
-55~150
℃
isc website：www.iscsemi.cn
1