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| MMBR931L Datasheet, PDF (2/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN RF Transistor | |||
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INCHANGE Semiconductor
isc Silicon NPN RF Transistor
isc RF Product Specification
MMBR931L
ELECTRICAL CHARACTERISTICS
TC=25â unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 0.1mA ; IB= 0
5
V
V(BR)CBO Collector-Base Breakdown Voltage
IC= 0.01mA ; IE= 0
10
V
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 0.1mA ; IC= 0
2
V
ICBO
Collector Cutoff Current
VCB= 5V; IE= 0
50
nA
hFE
DC Current Gain
IC= 0.25mA ; VCE= 1V
50
150
COB
Output Capacitance
IE= 0; VCB= 1V; f= 1MHz
0.5 pF
GNF
Power Gain at Optimum Figure
IE= 0.25mA ; VCE= 1V; f= 1GHz
10
dB
NF
Noise Figure
IE= 0.25mA ; VCE= 1V; f= 1GHz
4.3
dB
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