MMBR931L Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN RF Transistor

INCHANGE Semiconductor
isc Silicon NPN RF Transistor
isc RF Product Specification
MMBR931L
DESCRIPTION
·Low Noise Figure
NF = 4.3 dB TYP. @V_CE = 1 V, I_E = 0.25 mA, f = 1 GHz
APPLICATIONS
·Designed primarily for use in low-power amplifiers to 1.0
GHz ,Ideal for pagers and other battery operated systems
where power consumption is critical.
ABSOLUTE MAXIMUM RATINGS(T_a=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
V_CBO Collector-Base Voltage
10
V
V_CEO Collector-Emitter Voltage
5
V
V_EBO Emitter-Base Voltage
2
V
I_C
Collector Current-Continuous
Collector Power Dissipation
P_C
@T_C= 75℃
T_J
Junction Temperature
T_stg
Storage Temperature Range
5
mA
0.15
W
150
℃
-55~150
℃
isc website：www.iscsemi.cn
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