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| MMBR901L Datasheet, PDF (2/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN RF Transistor | |||
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INCHANGE Semiconductor
isc Silicon NPN RF Transistor
isc RF Product Specification
MMBR901L
ELECTRICAL CHARACTERISTICS
TC=25â unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 1mA ; IB= 0
15
V
V(BR)CBO Collector-Base Breakdown Voltage
IC= 0.1mA ; IE= 0
25
V
V(BR)EBO Emitter-Base Breakdown Voltage
ICBO
Collector Cutoff Current
IE= 0.1mA ; IC= 0
VCB= 15V; IE= 0
2
V
0.05 μA
hFE
DC Current Gain
IC= 5mA ; VCE= 5V
50
200
COB
Output Capacitance
IE= 0 ; VCB= 10V; f= 1MHz
1.0 pF
fT
Current-GainâBandwidth Product
IC= 15mA ; VCE= 10V; f= 1GHz
3.8
GHz
Gpe
Common-Emitter Amplifier Gain
NFmin Minimum Noise Figure
IC= 5mA ; VCC= 6V; f= 1GHz
IC= 5mA ; VCE= 6V; f= 1GHz
12
dB
1.9
dB
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