MMBR901L Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN RF Transistor

INCHANGE Semiconductor
isc Silicon NPN RF Transistor
isc RF Product Specification
MMBR901L
DESCRIPTION
·Low Noise
·High Power Gain-
G_pe = 12.0 dB TYP. @ f = 1 GHz
APPLICATIONS
·Designed for use in high gain ,low noise , small signal
amplifiers for operation up to 2.5GHz.
ABSOLUTE MAXIMUM RATINGS(T_a=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
V_CBO Collector-Base Voltage
25
V
V_CEO Collector-Emitter Voltage
15
V
V_EBO Emitter-Base Voltage
2
V
I_C
Collector Current-Continuous
Collector Power Dissipation
P_C
@T_C= 75℃
T_J
Junction Temperature
T_stg
Storage Temperature Range
30
mA
0.3
W
150
℃
-55~150
℃
isc website：www.iscsemi.cn
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