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| MMBR571L Datasheet, PDF (2/5 Pages) New Jersey Semi-Conductor Products, Inc. – Silicon NPN RF Transistor | |||
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INCHANGE Semiconductor
isc Silicon NPN RF Transistor
isc RF Product Specification
MMBR571L
ELECTRICAL CHARACTERISTICS
TC=25â unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 1mA ; IB= 0
10
V
V(BR)CBO Collector-Base Breakdown Voltage
IC= 0.1mA ; IE= 0
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 50μA ; IC= 0
ICBO
Collector Cutoff Current
VCB= 8V; IE= 0
20
V
3
V
10 μA
hFE
DC Current Gain
IC= 30mA ; VCE= 5V
50
300
COB
Output Capacitance
IE= 0 ; VCB= 10V; f= 1MHz
0.7 1.0 pF
fT
Current-GainâBandwidth Product
IC= 50mA ; VCE= 5V; f= 1GHz
8
GHz
G NF
Gain@Noise Figure
G NF
Gain@Noise Figure
NF
Noise Figure
IC= 10mA ; VCE= 5V; f= 0.5GHz
16.5
dB
IC= 10mA ; VCE= 5V; f= 1GHz
10.5
dB
IC= 10mA ; VCE= 5V; f= 0.5GHz
2.0
dB
NF
Noise Figure
IC= 10mA ; VCE= 5V; f= 1GHz
2.6
dB
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