MMBR571L Datasheet, PDF (1/5 Pages) New Jersey Semi-Conductor Products, Inc. – Silicon NPN RF Transistor

INCHANGE Semiconductor
isc Silicon NPN RF Transistor
isc RF Product Specification
MMBR571L
DESCRIPTION
·Low Noise
·High Current-Gain Bandwidth Product
f_T = 8.0 GHz TYP. @ I_C= 50 mA
·High Gain
G_NF = 16.5 dB TYP. @ I_C= 10mA, f = 0.5 GHz
APPLICATIONS
·Designed for low noise , wide dynamic range front-end
amplifiers and low-noise VCO’S.
ABSOLUTE MAXIMUM RATINGS(T_a=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
V_CBO Collector-Base Voltage
20
V
V_CEO Collector-Emitter Voltage
10
V
V_EBO Emitter-Base Voltage
3
V
I_C
Collector Current-Continuous
Collector Power Dissipation
P_C
@T_C= 75℃
T_J
Junction Temperature
T_stg
Storage Temperature Range
80
mA
0.33
W
150
℃
-55~150
℃
isc website：www.iscsemi.cn
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