MJW21194 Datasheet, PDF (2/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Power Transistor

INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
MJW21194
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 10mA ; IB= 0
250
V
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 8A; IB= 0.8A
1.4
V
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 16A; IB= 3.2A
4.0
V
VBE(on) Base-Emitter On Voltage
IC= 8A; VCE= 5V
2.2
V
ICBO
Collector Cutoff Current
VCB= 400V; IE= 0
100 μA
ICEO
Collector Cutoff Current
VCE= 200V; IE= 0
100 μA
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
100 μA
hFE-1
DC Current Gain
IC= 8A ; VCE= 5V
20
hFE-2
DC Current Gain
IC= 16A ; VCE= 5V
8
fT
Current-Gain—Bandwidth Product
IE= 1A ; VCE= 10V
4
Is/b
Second Breakdown Collector
Current with Base Forward Biased
VCE= 80V,t= 1.0s,Nonrepetitive
2.25
MHz
A
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