MJW21194 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Power Transistor

INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
MJW21194
DESCRIPTION
•Total Harmonic Distortion Characterized
• High DC Current Gain –
h FE = 20 Min @ I C = 8 Adc
·High SOA: 2.25A, 80 V, 1Second
·TO–3PN Package
·Complement to Type MJW21193
APPLICATIONS
·Designed for high power audio output,disk head positioners
and linear applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
400
V
VCEO
Collector-Emitter Voltage
250
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
16
A
ICM
Collector Current-Pulse
30
A
IB
Base Current-Continuous
PC
Collector Power Dissipation
@ TC=25℃
TJ
Junction Temperature
5
A
200
W
150
℃
Tstg
Storage Temperature Range
-65~150
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance,Junction to Case
0.7 ℃/W
Rth j-a Thermal Resistance,Junction to Ambient
40 ℃/W
isc Website：www.iscsemi.com
isc & iscsemi is registered trademark