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MJW21192 Datasheet, PDF (2/2 Pages) Motorola, Inc – 8.0 AMPERES POWER TRANSISTORS COMPLEMENTARY SILICON 150 VOLTS 100 WATTS
INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
MJW21192
ELECTRICAL CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC=10mA; IB=0
VCE(sat)-1 Collector-Emitter Saturation Voltage IC=4A ;IB=B 0.4A
VCE(sat)-2 Collector-Emitter Saturation Voltage IC=8A ;IB=B 1.6A
VBE(on) Base-Emitter On Voltage
IC=4A ; VCE=2V
ICEs
Collector Cutoff Current
VCE=250V; IE=0
IEBO
Emitter Cutoff Current
VEB=5V; IC=0
hFE-1
DC Current Gain
IC=4A; VCE=2V
hFE-2
DC Current Gain
IC=8A; VCE=2V
fT
Current Gain-Bandwidth Product
IC=1A ;VCE=10V; ftest=1MHz
MIN TYP. MAX UNIT
150
V
1.0
V
2.0
V
2
V
10 μA
10 μA
15
100
5
4
MHz
isc Website:www.iscsemi.cn
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