MJW21192 Datasheet, PDF (1/2 Pages) Motorola, Inc – 8.0 AMPERES POWER TRANSISTORS COMPLEMENTARY SILICON 150 VOLTS 100 WATTS

INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
MJW21192
DESCRIPTION
·DC Current Gain
·High Area of Safe Operation
APPLICATIONS
·Designed for power audio output, or high power drivers in
audio amplifiers.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
V_CBO
Collector-Emitter Voltage
150
V
V_CEO
Collector-Emitter Voltage
150
V
V_EBO
Emitter-Base Voltage
5
V
I_C
Collector Current-Continuous
8
A
I_CM
Collector Current-Pulsed
16
A
I_BB
Base Current-Continuous
2
A
P_D
Total Power Dissipation (T_C=25℃)
100
W
T_j
Junction Temperature
150
℃
T_stg
Storage Temperature
-65~150
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
VALUE
R_{th j-C} ThermalResistance Junction To Case 0.65
UNIT
℃/W
isc Website：www.iscsemi.cn