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MJW16010A Datasheet, PDF (2/2 Pages) Motorola, Inc – POWER TRANSISTORS 15 AMPERES 500 VOLTS 125 AND 175 WATTS
INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
MJW16010A
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 100mA ;IB=0
500
V
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 5A; IB=B 1A
VCE(sat)-2
VBE(sat)
ICEV
ICER
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Collector Cutoff Current
IC= 10A; IB= 2A
IC= 10A; IB= 2A; TC=100℃
IC= 10A; IB= 2A
IC= 10A; IB= 2A; TC=100℃
VCEV=1000V;VBE(off)=1.5V
VCEV=1000V;VBE(off)=1.5V;TC=100℃
Collector Cutoff Current
VCE= 1000V;RBE= 50Ω;TC=100℃
0.7
V
1.0
1.5
V
1.5
V
0.15
1.0
mA
1.0 mA
IEBO
Emitter Cutoff Current
VEB= 6V; IC=0
0.15 mA
hFE
DC Current Gain
IC= 15A ; VCE= 5V
5
8
COB
Output Capacitance
IE= 0;VCB= 10V, ftest= 1.0kHz
Switching times;Resistive load(PW= 30μs; Duty Cycle≤2%)
td
Delay Time
tr
Rise Time
tstg
Storage Time
IC= 10A; IB1= 1.3A; IB2= 2.6A;
RB2= 1.6Ω; VCC= 250V
tf
Fall Time
400 pF
0.1 μs
0.6 μs
3.0 μs
0.4 μs
isc Website:www.iscsemi.cn
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