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| MJW16010A Datasheet, PDF (1/2 Pages) Motorola, Inc – POWER TRANSISTORS 15 AMPERES 500 VOLTS 125 AND 175 WATTS | |||
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
DESCRIPTION
·Low Collector Saturation Voltage
·Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = 500V(Min)
·Wide Area of Safe Operation
APPLICATIONS
·Designed for high-voltage, high-speed,power switching in
inductive circuits where fall time is critical. They are partic-
ularly suited for line-operated switchmode applications.
Typical applications:
·Switching regulators
·Inverters
·Solenoids
·Relay drivers
·Motor controls
·Deflection circuits
ABSOLUTE MAXIMUM RATINGS(Ta=25â)
SYMBOL
PARAMETER
VALUE
UNIT
VCEV
Collector-EmitterVoltage
1000
V
VCEO
Collector-Emitter Voltage
500
V
VEBO
Emitter-Base Voltage
6
V
IC
Collector Current-Continuous
15
A
ICM
Collector Current-Peak
20
A
IBB
Base Current
10
A
IBM
Base Current-Peak
Collector Power Dissipation
PC
@ TC=25â
TJ
Junction Temperature
Tstg
Storage Temperature Range
15
A
135
W
150
â
-55~150 â
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance, Junction to Case
MAX UNIT
0.92 â/W
isc Product Specification
MJW16010A
isc Websiteï¼www.iscsemi.cn
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