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| MJL21194 Datasheet, PDF (2/2 Pages) Savantic, Inc. – Silicon NPN Power Transistors | |||
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
MJL21194
ELECTRICAL CHARACTERISTICS
Tj=25â unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC=100mA; IB=B 0
VCE(sat)-1 Collector-Emitter Saturation Voltage IC=8A ;IB=B 0.8A
VCE(sat)-2 Collector-Emitter Saturation Voltage IC=16A ;IB=3.2A
VBE(on) Base-Emitter On Voltage
IC=8A ; VCE=5V
ICEO
Collector Cutoff Current
VCE=200V,IB=0
ICEX
Collector Cutoff Current
VCE=250V; VBE(off)=1.5V
IEBO
Emitter Cutoff Current
VEB=5V; IC=0
hFE-1
DC Current Gain
IC=8A; VCE=5V
hFE-2
DC Current Gain
IC=16A; VCE=5V
COB
Collector Capacitance
IE= 0; f=1MHz ; VCB=-10V
fT
Current Gain-Bandwidth Product
IC=1A ;VCE= 10V; ftest=1MHz
MIN TYP. MAX UNIT
250
V
1.4
V
4
V
2.2
V
0.1 mA
0.1 mA
100 μA
25
75
8
500 pF
4
MHz
isc Websiteï¼www.iscsemi.cn
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