MJL21194 Datasheet, PDF (1/2 Pages) Savantic, Inc. – Silicon NPN Power Transistors

INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
MJL21194
DESCRIPTION
·Total Harmonic Distortion Characterized
·High DC Current Gain
·High Area of Safe Operation
APPLICATIONS
·Designed for high power audio output, disk head positioners
and linear applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
V_CBO
Collector-Emitter Voltage
400
V
V_CEO
Collector-Emitter Voltage
250
V
V_EBO
Emitter-Base Voltage
5
V
I_C
Collector Current-Continuous
16
A
I_CM
Collector Current-Pulsed
30
A
I_BB
Base Current-Continuous
5
A
P_D
Total Power Dissipation (T_C=25℃)
200
W
T_j
Junction Temperature
150
℃
T_stg
Storage Temperature
-65~150
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
VALUE
R_{th j-C} ThermalResistance Junction To Case
0.7
UNIT
℃/W
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