MJH16010 Datasheet, PDF (2/2 Pages) New Jersey Semi-Conductor Products, Inc. – Power Transistors

INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
MJH16010
ELECTRICAL CHARACTERISTICS⁽¹⁾
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 100mA; IB= 0
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 5A ;IB= 0.7A
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 10A ;IB= 1.3A ;
VCE(sat)-3 Collector-Emitter Saturation Voltage IC= 10A ;IB= 1.3A ;TC=100℃
VBE(sat)-1 Base-Emitter Saturation Voltage
IC=10A ;IB= 1.3A ;
VBE(sat)-2 Base-Emitter Saturation Voltage
IC=10A ;IB= 1.3A ;TC=100℃
IEBO
Emitter Cutoff Current
VEB= 6V; IC= 0
hFE
DC Current Gain
IC=15A ; VCE= 5V
COB
Output Capacitance
IE= 0; f= 1kHz ; VCB= 10V
(1)Pulse test:Pulse width=300us,Duty cycle≤20%
MIN TYP. MAX UNIT
450
V
2.5 V
3.0 V
3.0 V
1.5 V
1.5 V
1.0 mA
5
400
pF
isc Website：www.iscsemi.com
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