MJH16010 Datasheet, PDF (1/2 Pages) New Jersey Semi-Conductor Products, Inc. – Power Transistors

INCHANGE Semiconductor
isc Silicon NPN Power Transistor
DESCRIPTION
·Collector-Emitter Voltage-
: VCEO(SUS)= 450V(Min)
·Low VCE(sat)@IC=10A
·Fast switching speed
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Switching regulators
·High voltage inverters
·Off - line power supplies
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VCEV
Collector-Emitter Voltage
850
VCEO(SUS) Collector-Emitter Voltage
450
VEBO
Emitter-Base Voltage
6
IC
Collector Current-Continuous
15
ICM
Collector Current-Peak
20
IB
Base Current-Continuous
10
IBM
Base Current-Peak
15
UNIT
V
V
V
A
A
A
A
PC
Collector Power Dissipation
@TC=25℃
175
W
Tj
Junction Temperature
Tstg
Storage Temperature Range
-55~150 ℃
-55~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
R(th)j-c Thermal Resistance,Junction to Case 1.00 ℃/W
isc Product Specification
MJH16010
isc Website：www.iscsemi.com
1 _{isc & iscsemi is registered trademark}