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| MJH13090 Datasheet, PDF (2/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Power Transistors | |||
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INCHANGE Semiconductor
isc Silicon NPN Power Transistors
isc Product Specification
MJH13090/13091
ELECTRICAL CHARACTERISTICS
TC=25â unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
MJH13090
400
VCEO(SUS)
Collector-Emitter
Sustaining Voltage
IC=100mA ; IB=0
MJH13091
450
VCE(sat)-1
Collector-Emitter Saturation Voltage
IC= 10A; IB= 2A
IC= 10A; IB= 2A;TC=100â
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 15A; IB= 3A
VBE(sat)
ICEV
Base-Emitter Saturation Voltage
Collector
Cutoff Current
MJH13090
MJH13091
IC= 10A; IB= 2A
IC= 10A; IB= 2A;TC=100â
VCEV=650V;VBE(off)=1.5V
VCEV=650V;VBE(off)=1.5V;TC=100â
VCEV=750V;VBE(off)=1.5V
VCEV=750V;VBE(off)=1.5V;TC=100â
ICER
Collector
Cutoff Current
MJH13090 VCE= 650V; RBE= 50Ω,TC= 100â
MJH13091 VCE= 750V; RBE= 50Ω,TC= 100â
V
1.0
2.0
V
3.0
V
1.5
1.5
V
0.5
2.5
mA
0.5
2.5
3.0
mA
3.0
IEBO
Emitter Cutoff Current
VEB= 6V; IC=0
1.0 mA
hFE
DC Current Gain
IC= 10A ; VCE= 3V
8
COB
Output Capacitance
Switching times;Resistive Load
td
Delay Time
tr
Rise Time
ts
Storage Time
tf
Fall Time
IE= 0; VCB= 10V; ftest=1.0kHz
IC= 10A , VCC= 250V;
IB1= 1.25A;tp= 30μs; VBE(off)= 5V
Duty Cycleâ¤2.0%
350 pF
30 50
ns
130 500 ns
550 2500 ns
100 500 ns
isc Websiteï¼www.iscsemi.cn
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