MJH13090 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Power Transistors

INCHANGE Semiconductor
isc Silicon NPN Power Transistors
DESCRIPTION
· Collector-Emitter Sustaining Voltage-
: V_CEO(SUS) = 400V(Min)—MJH13090
= 450V(Min)—MJH13091
·High Switching Speed
APPLICATIONS
·Designed for high-voltage ,high-speed, power switching in
inductive circuits where fall time is critical. They are partic-
ularly suited for line operated switch-mode applications.
Typical applications:
·Switching regulators
·Inverters
·Solenoid and relay drivers
·Motor controls
·Deflection circuits
ABSOLUTE MAXIMUM RATINGS(T_a=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
V_CEV
Collector-Emitter
Voltage
MJH13090
650
MJH13091
750
V
V_CEO(SUS)
Collector-Emitter
Voltage
MJH13090
400
MJH13091
450
V
V_EBO Emitter-Base Voltage
6
V
I_C
Collector Current-Continuous
15
A
I_CM
Collector Current-Peak
20
A
I_BB
Base Current-Continuous
5
A
I_BM
Base Current-Peak
Collector Power Dissipation
P_C
@T_C=25℃
T_J
Junction Temperature
T_stg
Storage Temperature
10
A
125
W
150
℃
-65~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
R_{th j-c} Thermal Resistance,Junction to Case
MAX
1.0
UNIT
℃/W
isc Product Specification
MJH13090/13091
isc Website：www.iscsemi.cn