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| MJH11018 Datasheet, PDF (2/2 Pages) New Jersey Semi-Conductor Products, Inc. – Silicon NPN Darlington Power Transistor | |||
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INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
isc Product Specification
MJH11018
ELECTRICAL CHARACTERISTICS
TC=25â unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 100mA, IB= 0
150
V
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 10A ,IB= 0.1A
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 15A ,IB= 0.15A
VBE(sat) Base-Emitter Saturation Voltage
IC= 15A ,IB= 0.15A
VBE(on) Base-Emitter On Voltage
ICEV
Collector Cutoff Current
ICEO
Collector Cutoff Current
IC= 10A ; VCE= 5V
VCEV=150V;VBE(off)=1.5V
VCEV=150V;VBE(off)=1.5V;TC=150â
VCE= 75V, IB=0
2.5
V
4.0
V
3.8
V
2.8
V
0.5
5.0
mA
1
mA
IEBO
Emitter Cutoff Current
VEB= 5V; IC=0
2
mA
hFE-1
DC Current Gain
IC= 10A ; VCE= -5V
400
15000
hFE-2
DC Current Gain
IC= 15A ; VCE= -5V
100
COB
Output Capacitance
Switching times
td
Delay Time
tr
Rise Time
ts
Storage Time
tf
Fall Time
IE= 0 ; VCB= 10V,f= 0.1MHz
IC= 10A , VCC= 100V;
IB= 0.1A; VBE(off)= 5V;
Duty Cycleâ¤2.0%
400 pF
150
ns
1.2
μs
4.4
μs
2.5
μs
isc websiteï¼www.iscsemi.cn
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