MJH11018 Datasheet, PDF (1/2 Pages) New Jersey Semi-Conductor Products, Inc. – Silicon NPN Darlington Power Transistor

INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
isc Product Specification
MJH11018
DESCRIPTION
·High DC Current Gain-
: h_FE = 400(Min)@ I_C= 10A
·Collector-Emitter Sustaining Voltage-
: V_CEO(SUS) = 150V(Min)
·Low Collector-Emitter Saturation Voltage-
: V_CE(sat) = 2.5V(Max)@ I_C= 10A
= 4.0V(Max)@ I_C= 15A
·Complement to Type MJH11017
APPLICATIONS
·Designed for general purpose amplifiers ,low frequency
switching and motor control applications.
ABSOLUTE MAXIMUM RATINGS(T_a=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
V_CBO
Collector-Base Voltage
150
V
V_CEO
V_EBO
I_C
I_CM
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current-Continuous
Collector Current-Peak
150
V
5
V
15
A
30
A
I_B
Base Current- Continuous
Collector Power Dissipation
P_C
@T_C=25℃
T_j
Junction Temperature
T_stg
Storage Temperature Range
0.5
A
150
W
150
℃
-65~150
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
R_{th j-c} Thermal Resistance,Junction to Case 0.83 ℃/W
isc website：www.iscsemi.cn
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