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| MJF45H11 Datasheet, PDF (2/2 Pages) Savantic, Inc. – Silicon PNP Power Transistors | |||
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INCHANGE Semiconductor
isc Silicon PNP Power Transistors
isc Product Specification
MJF45H11
ELECTRICAL CHARACTERISTICS
TC=25â unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP MAX UNIT
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -30mA; IB= 0
-80
V
VCE(sat) Collector-Emitter Saturation Voltage IC= -8A; IB= -0.4 A
VBE(sat) Base-Emitter Saturation Voltage
IC= -8A; IB= -0.8 A
ICES
Collector Cutoff Current
VCE=Rated VCEO;
IEBO
Emitter Cutoff Current
VEB= -5V; IC= 0
-1.0 V
-1.5 V
-1.0 μA
-10 μA
hFE-1
DC Current Gain
IC= -2A; VCE= -1V
60
hFE-2
DC Current Gain
IC= -4A; VCE= -1V
40
COB
Output Capacitance
VCB= -10V, f= 0.1MHz
230
pF
fT
Current-GainâBandwidth Product IC=-0.5A; VCE=-10V; ftest=20MHz
40
MHz
Switching Times
ton
Turn-On Time
ts
Storage Time
tf
Fall Time
IC= -5A; IB1= -0.5A
IC= -5A; IB1= -IB2= -0.5A
135
ns
500
ns
100
ns
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