MJF45H11 Datasheet, PDF (1/2 Pages) Savantic, Inc. – Silicon PNP Power Transistors

INCHANGE Semiconductor
isc Silicon PNP Power Transistors
isc Product Specification
MJF45H11
DESCRIPTION
·Low Collector Saturation Voltage-
: V_CE(sat)= -1.0V(Max.)@ I_C= -8A
·Fast Switching Speeds
·Complement to Type MJF44H11
APPLICATIONS
·Designed for general purpose power amplification and
switching such as output or driver stages in applications
such as switching regulators,converters and power amplifier.
ABSOLUTE MAXIMUM RATINGS(T_a=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
V_CEO
Collector-Emitter Voltage
-80
V
V_EBO
Emitter-Base Voltage
-5
V
I_C
Collector Current-Continuous
-10
A
I_CM
Collector Current-Peak
Collector Power Dissipation
@T_C=25℃
P_C
Collector Power Dissipation
@T_a=25℃
T_j
Junction Temperature
T_stg
Storage Temperature Range
-20
A
36
W
2
150
℃
-55~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
R_{th j-c}
R_{th j-a}
Thermal Resistance, Junction to Case
3.5 ℃/W
Thermal Resistance,Junction to Ambient 62.5 ℃/W
isc Website：www.iscsemi.cn