MJF15030 Datasheet, PDF (2/4 Pages) Motorola, Inc – COMPLEMENTARY SILICON POWER TRANSISTORS 8 AMPERES 150 VOLTS 36 WATTS

Inchange Semiconductor
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V_CEO(SUS) Collector-emitter sustaining voltage I_C=10mA; I_B=0
V_CEsat Collector-emitter saturation voltage I_C=1A ;I_B=0.1A
V_BE
Base-emitter on voltage
I_C=1A ; V_CE=2V
I_CBO
Collector cut-off current
I_CEO
Collector cut-off current
I_EBO
Emitter cut-off current
V_CB=150V; I_E=0
V_CE=150V; I_B=0
V_EB=5V; I_C=0
h_FE-1
DC current gain
I_C=0.1A ; V_CE=2V
h_FE-2
DC current gain
I_C=2A ; V_CE=2V
h_FE-3
DC current gain
I_C=3A ; V_CE=2V
h_FE-4
f_T
DC current gain
Transition frequency
I_C=4A ; V_CE=2V
I_C=0.5A;V_CE=10V;f=10MHz
Product Specification
MJF15030
MIN TYP. MAX UNIT
150
V
0.5
V
1.0
V
10
A
10
A
10
A
40
40
40
20
30
MHz
2