MJF15030 Datasheet, PDF (1/4 Pages) Motorola, Inc – COMPLEMENTARY SILICON POWER TRANSISTORS 8 AMPERES 150 VOLTS 36 WATTS

Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
MJF15030
DESCRIPTION
With TO-220F package
Complement to type MJF15031
High transition frequency
DC current gain specified to 4.0 amperes
h_FE = 40 (Min) @ I_C = 3.0 Adc
h_FE = 20 (Min) @ I_C = 4.0 Adc
APPLICATIONS
Designed for general-purpose amplifier
and switching applications
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector;connected to
mounting base
Emitter
Fig.1 simplified outline (TO-220F) and symbol
Absolute maximum ratings (Tc=25 )
SYMBOL
PARAMETER
V_CBO
Collector-base voltage
V_CEO
Collector-emitter voltage
V_EBO
Emitter-base voltage
I_C
Collector current (DC)
I_CM
Collector current-Peak
I_B
Base current
P_D
Total power dissipation
T_j
Junction temperature
T_stg
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
T_a=25
T_C=25
VALUE
150
150
5
8
16
2
2
36
150
-65~150
UNIT
V
V
V
A
A
A
W
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
R_{th j-C}
Thermal resistance ; junction to case
R_{th j-A}
Thermal resistance , junction to ambient
MAX
3.5
62.5
UNIT
/W
/W