 English |
|
|
|
|
|
|
|
| MJE802 Datasheet, PDF (2/2 Pages) STMicroelectronics – SILICON NPN POWER DARLINGTON TRANSISTORS | |||
| |||
| ◁ |
INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
isc Product Specification
MJE802
ELECTRICAL CHARACTERISTICS
TC=25â unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA; IB= 0
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 1.5A; IB= 30mA
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 4A; IB=B -40mA
VBE(on)-1 Base-Emitter On Voltage
IC= 1.5A; VCE= 3V
VBE(on)-2 Base-Emitter On Voltage
IC= 4A; VCE= -3V
ICEO
Collector Cutoff Current
ICBO
Collector Cutoff Current
IEBO
Emitter Cutoff Current
VCE= 80V; IB= 0
VCB= 80V; IE= 0
VCB= 80V; IE= 0;TC= 100â
VEB= 5V; IC= 0
hFE-1
DC Current Gain
IC= 1.5A ; VCE= 3V
hFE-2
DC Current Gain
IC= 4A ; VCE= 3V
MIN MAX UNIT
80
V
2.5
V
3.0
V
2.5
V
3.0
V
0.1
mA
0.1
0.5
mA
2.0
mA
750
100
isc Websiteï¼www.iscsemi.cn
|
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese