MJE802 Datasheet, PDF (1/2 Pages) STMicroelectronics – SILICON NPN POWER DARLINGTON TRANSISTORS

INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
isc Product Specification
MJE802
DESCRIPTION
·Collector–Emitter Breakdown Voltage—
: V_(BR)CEO = 80 V
·DC Current Gain—
: h_FE = 750(Min) @ I_C= 1.5A
= 100(Min) @ I_C= 4A
·Complement to Type MJE702
APPLICATIONS
·Designed for general-purpose amplifier and low-speed
switching applications
ABSOLUTE MAXIMUM RATINGS(T_a=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
V_CBO
Collector-Base Voltage
80
V
V_CEO
Collector-Emitter Voltage
80
V
V_EBO
Emitter-Base Voltage
5
V
I_C
Collector Current-Continuous
4
A
I_BB
Base Current
Collector Power Dissipation
P_C
T_C=25℃
T_i
Junction Temperature
T_stg
Storage Temperature Range
0.1
A
40
W
150
℃
-55~150
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
R_{th j-c}
Thermal Resistance, Junction to Case 3.13 ℃/W
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