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| MJE700T Datasheet, PDF (2/2 Pages) Mospec Semiconductor – POWER TRANSISTORS(4.0A,60-80V,40W) | |||
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INCHANGE Semiconductor
isc Silicon PNP Darlington Power Transistor
isc Product Specification
MJE700T
ELECTRICAL CHARACTERISTICS
TC=25â unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC=-50mA; IB= 0
VCE(sat)-1 Collector-Emitter Saturation Voltage IC=-1.5A; IB=-40mA
VCE(sat)-2 Collector-Emitter Saturation Voltage IC=-4A; IB=-40mA
VBE(on)-1 Base-Emitter On Voltage
IC=-1.5A; VCE=-3V
VBE(on)-2 Base-Emitter On Voltage
IC=-4A; VCE=-3V
ICEO
Collector Cutoff Current
ICBO
Collector Cutoff Current
IEBO
Emitter Cutoff Current
VCE=-60V; IB=B 0
VCB=-60V; IE= 0
VCB=-60V; IE= 0;TC= 100â
VEB=-5V; IC= 0
hFE-1
DC Current Gain
IC=-1.5A ; VCE=-3V
hFE-2
DC Current Gain
IC=-4A ; VCE=-3V
MIN MAX UNIT
-60
V
-2.5
V
-3.0
V
-2.5
V
-3.0
V
-0.1
mA
-0.1
-0.5
mA
-2.0
mA
750
100
isc Websiteï¼www.iscsemi.cn
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