MJE700T Datasheet, PDF (1/2 Pages) Mospec Semiconductor – POWER TRANSISTORS(4.0A,60-80V,40W)

INCHANGE Semiconductor
isc Silicon PNP Darlington Power Transistor
isc Product Specification
MJE700T
DESCRIPTION
·Collector–Emitter Breakdown Voltage—
: V_(BR)CEO =-60 V
·DC Current Gain—
: h_FE = 750(Min) @ I_C=-1.5A
·Complement to Type MJE800T
APPLICATIONS
·Designed for general-purpose amplifier and low-speed
switching applications
ABSOLUTE MAXIMUM RATINGS(T_a=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
V_CBO
Collector-Base Voltage
-60
V
V_CEO
Collector-Emitter Voltage
-60
V
V_EBO
Emitter-Base Voltage
-5
V
I_C
Collector Current-Continuous
-4
A
I_BB
Base Current
Collector Power Dissipation
P_C
T_C=25℃
T_i
Junction Temperature
T_stg
Storage Temperature Range
-0.1
A
50
W
150
℃
-55~150
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
R_{th j-c}
Thermal Resistance, Junction to Case 2.5 ℃/W
isc Website：www.iscsemi.cn