MJE350 Datasheet, PDF (2/2 Pages) Motorola, Inc – 0.5 AMPERE POWER TRANSISTOR PNP SILICON 300 VOLTS 20 WATTS

INCHANGE Semiconductor
isc Silicon PNP Power Transistor
isc Product Specification
MJE350
ELECTRICAL CHARACTERISTICS
TC =25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -1.0mA; IB= 0
V(BR)CBO Collector-Base Breakdown Voltage IC= -1.0mA; IE= 0
V(BR)EBO Emitter-Base Breakdown Voltage
IE= -1.0mA; IC= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= -50mA; IB= -5mA
ICBO
Collector Cutoff Current
VCB= -300V; IE= 0
IEBO
Emitter Cutoff Current
VEB= -3V; IC= 0
hFE
DC Current Gain
IC= -50m A ; VCE= -10V
MIN MAX UNIT
-300
V
-300
V
-3
V
-1.0
V
-0.1
mA
-0.1
mA
30
240
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