MJE350 Datasheet, PDF (1/2 Pages) Motorola, Inc – 0.5 AMPERE POWER TRANSISTOR PNP SILICON 300 VOLTS 20 WATTS

INCHANGE Semiconductor
isc Silicon PNP Power Transistor
isc Product Specification
MJE350
DESCRIPTION
·Collector–Emitter Sustaining Voltage-
: VCEO(SUS) = -300 V(Min)
·DC Current Gain-
: hFE = -100(Min) @ IC= -50mA
·Low Collector Saturation Voltage-
: VCE(sat) = -1.0V(Max.)@ IC= -50mA
·Complement to the NPN MJE340
APPLICATIONS
·Designed for high voltage and general purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-300
V
VCEO
Collector-Emitter Voltage
-300
V
VEBO
Emitter-Base Voltage
-3
V
IC
Collector Current-Continuous
PC
Collector Power Dissipation
TC=25℃
Ti
Junction Temperature
Tstg
Storage Temperature Range
-0.5
A
20
W
150
℃
-65~150
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance,Junction to Case 6.25 ℃/W
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