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| MJE341 Datasheet, PDF (2/2 Pages) Motorola, Inc – 0.5 AMPERE POWER TRANSISTORS NPN SILICON 150-200 VOLTS 20 WATTS | |||
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
MJE341
ELECTRICAL CHARACTERISTICS
TC =25â unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 1.0mA; IB=B 0
VCE(sat) Collector-Emitter Saturation Voltage IC=150mA ;IB=15mA
VBE(on) Base-Emitter On Voltage
IC=50mA ; VCE= 10V
ICBO
Collector Cutoff Current
VCB= 175V; IE= 0
ICEO
Collector Cutoff Current
VCB= 150V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 3V; IC= 0
hFE-1
DC Current Gain
IC= 10m A ; VCE= 10V
hFE-2
DC Current Gain
IC= 50m A ; VCE= 10V
hFE-3
DC Current Gain
IC=150m A ; VCE= 10V
COB
Output Capacitance
IE= 0, VCB=20V; f= 0.1MHz
fT
Current Gain-Bandwidth Product
IC=50mA ;VCE=25V; ftest=1MHz
MIN MAX UNIT
150
V
2.3
V
1.0
V
0.3
mA
1.0
mA
0.1
mA
20
25
200
20
15
pF
15
MHz
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