MJE341 Datasheet, PDF (1/2 Pages) Motorola, Inc – 0.5 AMPERE POWER TRANSISTORS NPN SILICON 150-200 VOLTS 20 WATTS

INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
MJE341
APPLICATIONS
·Useful for medium voltage applications requiring high
f_T such as converters and extended range amplifiers.
ABSOLUTE MAXIMUM RATINGS(T_a=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
V_CBO
Collector-Base Voltage
175
V
V_CEO
Collector-Emitter Voltage
150
V
V_EBO
Emitter-Base Voltage
3
V
I_C
Collector Current-Continuous
Collector Power Dissipation
P_C
T_C=25℃
T_i
Junction Temperature
T_stg
Storage Temperature Range
0.5
A
20
W
150
℃
-65~150
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
R_{th j-c} Thermal Resistance,Junction to Case
MAX UNIT
6.25 ℃/W
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