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| MJE3055T Datasheet, PDF (2/2 Pages) Wing Shing Computer Components – SILICON EPITAXIAL PLANAR TRANSISTOR | |||
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
MJE3055T
ELECTRICAL CHARACTERISTICS
TC=25â unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 200mA; IB= 0
-60
V
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 4A; IB=B 0.4A
1.1
V
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 10A; IB= 3.3A
8.0
V
VBE(on) Base-Emitter On Voltage
ICEX
Collector Cutoff Current
ICEO
Collector Cutoff Current
ICBO
Collector Cutoff Current
IEBO
Emitter Cutoff Current
IC= 4A ; VCE= 4V
VCE=70V;VEB(off)=-1.5V
VCE=70V;VEB(off)=-1.5V;TC= 150â
VCE= 30V; IB=B 0
VCB= 70V; IE= 0
VCB= 70V; IE= 0; TC= 150â
VEB= 5V; IC= 0
1.8
V
1.0
5.0
mA
0.7 mA
1.0
10
mA
5.0 mA
hFE-1
DC Current Gain
IC= 4A ; VCE= 4V
20
100
hFE-2
DC Current Gain
IC= 10A ; VCE= 4V
5
fT
Current Gain-Bandwidth Product
IC= 0.5A; VCE= 10V; f= 500kHz
2.0
MHz
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