MJE3055T Datasheet, PDF (1/2 Pages) Wing Shing Computer Components – SILICON EPITAXIAL PLANAR TRANSISTOR

INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
MJE3055T
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V_(BR)CEO = 60V(Min)
·High DC Current Gain-
: h_FE= 20-100@I_C= 4A
·Complement to Type MJE2955T
APPLICATIONS
·Designed for use in general-purpose amplifier and switching
applications.
ABSOLUTE MAXIMUM RATINGS(T_a=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
V_CBO
Collector-Base Voltage
70
V
V_CEO
Collector-Emitter Voltage
60
V
V_EBO
Emitter-Base Voltage
5
V
I_C
Collector Current-Continuous
10
A
I_BB
Base Current-Continuous
Collector Power Dissipation
P_C
@ T_C=25℃
T_J
Junction Temperature
T_stg
Storage Temperature Range
6
A
75
W
150
℃
-55~150
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
R_{th j-c} Thermal Resistance,Junction to Case
MAX
1.67
UNIT
℃/W
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