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| MJE2955T Datasheet, PDF (2/3 Pages) Mospec Semiconductor – POWER TRANSISTORS(10A,60V,75W) | |||
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Inchange Semiconductor
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-emitter sustaining voltage IC=-0.2A ;IB=0
VCEsat-1 Collector-emitter saturation voltage IC=-4A ;IB=-0.4A
VCEsat-2 Collector-emitter saturation voltage IC=-10A ;IB=-3.3A
VBE
Base-emitter on voltage
ICEO
Collector cut-off current
ICEX
Collector cut-off current
ICBO
Collector cut-off current
IEBO
Emitter cut-off current
IC=-4A ; VCE=-4V
VCE=-30V; IB=0
VCE=-70V; VBE(off)=-1.5V
TC=150
VCB=-70V; IE=0
TC=150
VEB=-5V; IC=0
hFE-1
DC current gain
IC=-4A ; VCE=-4V
hFE-2
fT
DC current gain
Transition frequency
IC=-10A ; VCE=-4V
IC=-0.5A ; VCE=-10V
Product Specification
MJE2955T
MIN TYP. MAX UNIT
-60
V
-1.1
V
-8.0
V
-1.8
V
-0.7 mA
-1.0
-5.0
mA
-1.0
-10
mA
-5.0 mA
20
100
5.0
2.0
MHz
2
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