MJE2955T Datasheet, PDF (1/3 Pages) Mospec Semiconductor – POWER TRANSISTORS(10A,60V,75W)

Inchange Semiconductor
Silicon PNP Power Transistors
Product Specification
MJE2955T
DESCRIPTION
With TO-220 package
Complement to type MJE3055T
DC current gain -h _FE = 20–70 @ I_C = -4 Adc
Collector–emitter saturation voltage -
V_CE(sat) = -1.1 Vdc (Max) @ I_C =- 4 Adc
APPLICATIONS
Designed for general–purpose
switching and amplifier applications.
PINNING
PIN
1
2
3
DESCRIPTION
Emitter
Collector;connected to
mounting base
Base
Fig.1 simplified outline (TO-220) and symbol
Absolute maximum ratings(Ta= )
SYMBOL
PARAMETER
V_CBO
Collector-base voltage
V_CEO
Collector-emitter voltage
V_EBO
Emitter-base voltage
I_C
Collector current
I_B
Base current
P_C
Collector power dissipation
T_j
Junction temperature
T_stg
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
T_C=25
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
R_{th j-c}
Thermal resistance junction to case
VALUE
-70
-60
-5
-10
-6
75
150
-55~150
UNIT
V
V
V
A
A
W
VALUE
1.67
UNIT
/W