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| MJE2901T Datasheet, PDF (2/2 Pages) Inchange Semiconductor Company Limited – isc Silicon PNP Power Transistor | |||
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INCHANGE Semiconductor
isc Silicon PNP Power Transistor
isc Product Specification
MJE2901T
ELECTRICAL CHARACTERISTICS
TC=25â unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= -200mA; IB= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= -4A; IB=B -0.4A
VBE(on) Base-Emitter On Voltage
ICBO
Collector Cutoff Current
IEBO
Emitter Cutoff Current
IC= -3A ; VCE= -2V
VCB= -60V; IE= 0
VCB= -60V; IE= 0;TC= 150â
VEB= -4V; IC=0
hFE
DC Current Gain
IC= -3A ; VCE= -2V
MIN TYP. MAX UNIT
-60
V
-1.1
V
-1.4
V
-0.1
-2.0
mA
-1.0 mA
25
100
isc Websiteï¼www.iscsemi.cn
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