MJE2901T Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon PNP Power Transistor

INCHANGE Semiconductor
isc Silicon PNP Power Transistor
isc Product Specification
MJE2901T
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V_(BR)CEO = -60V(Min)
·High DC Current Gain-
: h_FE= 25-100@I_C= -3A
·Complement to Type MJE2801T
APPLICATIONS
·Designed for use as an output device in complementary
audio amplifiers up to 35 watts music power per channel.
ABSOLUTE MAXIMUM RATINGS(T_a=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
V_CBO
Collector-Base Voltage
-60
V
V_CEO
Collector-Emitter Voltage
-60
V
V_EBO
Emitter-Base Voltage
-4
V
I_C
Collector Current-Continuous
-10
A
I_BB
Base Current-Continuous
Collector Power Dissipation
P_C
@ T_C=25℃
T_J
Junction Temperature
T_stg
Storage Temperature Range
-5
A
75
W
150
℃
-55~150
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
R_{th j-c} Thermal Resistance,Junction to Case
MAX
1.67
UNIT
℃/W
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