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| MJE253 Datasheet, PDF (2/2 Pages) Inchange Semiconductor Company Limited – isc Silicon PNP Power Transistor | |||
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INCHANGE Semiconductor
isc Silicon PNP Power Transistor
isc Product Specification
MJE253
ELECTRICAL CHARACTERISTICS
TC =25â unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN MAX UNIT
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -10mA; IB= 0
-100
V
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -0.5 A ;IB= -50mA
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= -1A ;IB= -0.1A
VBE(sat) Base-Emitter Saturation Voltage
IC= -2A ;IB= -0.2A
VBE(on) Base-Emitter On Voltage
ICBO
Collector Cutoff Current
IEBO
Emitter Cutoff Current
IC= -0.5A; VCE= -1V
VCB= -100V; IE= 0
VCB= -100V; IE= 0;TC= 125â
VEB= -7V; IC= 0
-0.3
V
-0.6
V
-1.8
V
-1.5
V
-0.1
μA
-0.1
mA
-0.1
μA
hFE-1
DC Current Gain
IC= -0.2 A ; VCE= -1V
40
180
hFE-2
DC Current Gain
IC= -1A ; VCE= -1V
15
fT
Current-GainâBandwidth Product IC= -0.1 A; VCE= -10V; ftest = 10MHz 40
COB
Collector Capacitance
IE= 0; VCB= -10V; ftest = 0.1MHz
MHz
50
pF
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