 English |
|
|
|
|
|
|
|
| MJE253 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon PNP Power Transistor | |||
| |||
|
INCHANGE Semiconductor
isc Silicon PNP Power Transistor
DESCRIPTION
·CollectorâEmitter Sustaining Voltage-
: VCEO(SUS) = -100 V(Min)
·DC Current Gain-
: hFE = 40(Min) @ IC= -0.2 A
·Low Collector Saturation Voltage-
: VCE(sat) = -0.3V(Max.)@ IC= -0.5 A
·Complement to Type MJE243
APPLICATIONS
·Designed for low power audio amplifier and low-current,
high-speed switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25â)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-100
V
VCEO Collector-Emitter Voltage
-100
V
VEBO
Emitter-Base Voltage
-7
V
IC
Collector Current-Continuous
-4
A
ICM
Collector Current-Peak
-8
A
IBB
Base Current
Collector Power Dissipation
PC
Ta=25â
Collector Power Dissipation
TC=25â
Ti
Junction Temperature
Tstg
Storage Temperature Range
-1
A
1.5
W
15
150
â
-65~150 â
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c
Rth j-a
Thermal Resistance,Junction to Case
8.34 â/W
Thermal Resistance,Junction to Ambient 83.4 â/W
isc Product Specification
MJE253
isc Websiteï¼www.iscsemi.cn
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese