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| MJE243 Datasheet, PDF (2/2 Pages) Motorola, Inc – 4 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 100 VOLTS 15 WATTS | |||
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
MJE243
ELECTRICAL CHARACTERISTICS
TC =25â unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN MAX UNIT
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 10mA; IB= 0
100
V
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 0.5 A ;IB= 50mA
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 1A ;IB= 0.1A
VBE(sat) Base-Emitter Saturation Voltage
IC= 2A ;IB= 0.2A
VBE(on) Base-Emitter On Voltage
ICBO
Collector Cutoff Current
IEBO
Emitter Cutoff Current
IC= 0.5A; VCE= 1V
VCB= 100V; IE= 0
VCB= 100V; IE= 0;TC= 125â
VEB= 7V; IC= 0
0.3
V
0.6
V
1.8
V
1.5
V
0.1
μA
0.1
mA
0.1
μA
hFE-1
DC Current Gain
IC= 0.2 A ; VCE= 1V
40
180
hFE-2
DC Current Gain
IC= 1A ; VCE= 1V
15
fT
Current-GainâBandwidth Product IC= 0.1 A; VCE= 10V; ftest = 10MHz
40
COB
Collector Capacitance
IE= 0; VCB= 10V; ftest = 0.1MHz
MHz
50
pF
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