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| MJE243 Datasheet, PDF (1/2 Pages) Motorola, Inc – 4 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 100 VOLTS 15 WATTS | |||
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
DESCRIPTION
·CollectorâEmitter Sustaining Voltage-
: VCEO(SUS) = 100 V(Min)
·DC Current Gain-
: hFE = 40(Min) @ IC= 0.2 A
·Low Collector Saturation Voltage-
: VCE(sat) = 0.3V(Max.)@ IC= 0.5 A
·Complement to Type MJE253
APPLICATIONS
·Designed for low power audio amplifier and low-current,
high-speed switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25â)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
100
V
VCEO
Collector-Emitter Voltage
100
V
VEBO
Emitter-Base Voltage
7
V
IC
Collector Current-Continuous
4
A
ICM
Collector Current-Peak
8
A
IBB
Base Current
Collector Power Dissipation
PC
Ta=25â
Collector Power Dissipation
TC=25â
Ti
Junction Temperature
Tstg
Storage Temperature Range
1
A
1.5
W
15
150
â
-65~150
â
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c
Rth j-a
Thermal Resistance,Junction to Case
8.34 â/W
Thermal Resistance,Junction to Ambient 83.4 â/W
isc Product Specification
MJE243
isc Websiteï¼www.iscsemi.cn
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