MJE18004 Datasheet, PDF (2/2 Pages) Motorola, Inc – POWER TRANSISTOR 5.0 AMPERES 1000 VOLTS 35 and 75 WATTS

INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
MJE18004
ELECTRICAL CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP MAX UNIT
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 30mA; IB=0
VCE(sat)-1
VCE(sat)-2
Collector-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
IC= 1 A ;IB= 0.1A
TC=125℃
IC= 2A ;IB= 0.4 A
TC=125℃
VCE(sat)-3 Collector-Emitter Saturation Voltage IC= 2.5A ;IB= 0.5 A
VBE(sat)-1 Base-Emitter Saturation Voltage
IC= 1A; IB= 0.1A
450
V
0.5
0.6
V
0.45
0.8
V
0.75 V
1.1
V
VBE(sat)-2 Base-Emitter Saturation Voltage
VBE(sat)-3 Base-Emitter Saturation Voltage
ICES
Collector Cutoff Current
ICEO
Collector Cutoff Current
IC= 2A; IB= 0.4A
IC= 2.5A; IB= 0.5 A
VCES= RatedVCES;VEB= 0
TC=125℃
VCES= 800V
TC=125℃
VCE= RatedVCEO; IB= 0
1.25 V
1.3
V
0.05
0.5
mA
0.01
0.1
0.1 mA
IEBO
Emitter Cutoff Current
VEB= 9V; IC= 0
0.1 mA
hFE-1
DC Current Gain
IC= 1A ; VCE= 5V
14
36
hFE-2
DC Current Gain
IC= 2A ; VCE= 1V
6
hFE-3
DC Current Gain
IC= 10mA; VCE= 5V
10
fT
Current-Gain—Bandwidth Product I_C= 0.5A;V_CE= 10V;f_test=1.0MHz
13
MHz
COB
Output Capacitance
IE= 0; VCB= 10V; ftest=1.0MHz
450
pF
Switching Times Resistive Load,Duty Cycle≤10%,Pulse Width=20μs
ton
Turn-on Time
tS
Storage Time
tf
Turn-off Time
VCC=250V ,IC=2.5A
IB1=IB2=0.5 A
450 600 ns
2
3
μs
0.275 0.4 μs
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